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| APTGF150X60TE3 3 Phase bridge NPT IGBT Power Module VCES = 600V IC = 150A @ Tc = 80C Application * AC Motor control Features * * * * * 19 18 17 16 15 - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Non Punch Through (NPT) Fast IGBT(R) Benefits * Outstanding performance at high frequency operation Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile Max ratings 600 225 150 450 20 700 400A@480V Unit V A V W July, 2003 1-3 APTGF150X60TE3 - Rev 0 20 14 21 13 12 34 56 78 9 10 11 12 * * * * * * * Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com APTGF150X60TE3 Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current All ratings @ Tj = 25C unless otherwise specified Test Conditions VGE = 0V, IC = 500A Tj = 25C VGE = 0V VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 200A Tj = 125C VGE = VCE , IC = 4 mA VGE = 20V, VCE = 0V Min 600 Typ 1 1 2.0 2.2 Max 500 2.5 6.5 400 Unit V A mA V V nA 1.7 4.5 Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 200A RG = 1.5 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 200A RG = 1.5 Min Typ 9000 800 163 43 253 33 180 49 285 41 6.3 Max Unit pF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VF Er Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge Test Conditions IF = 200A VGE = 0V IF = 200A VR = 300V di/dt =800A/s IF = 200A VR = 300V di/dt =800A/s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C Min Typ 1.25 1.2 4.1 13 20 Max 1.6 Unit V mJ C Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25C B 25/50 T25 = 298.16 K Min RT = R25 exp B25 / 50 11 - T25 T T: Thermistor temperature RT: Thermistor value at T APT website - http://www.advancedpower.com 2-3 APTGF150X60TE3 - Rev 0 July, 2003 Typ 5 3375 Max Unit k K APTGF150X60TE3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To heatsink Package Weight IGBT Diode 2500 -40 -40 -40 3 150 125 125 4.5 300 Min Typ Max 0.18 0.32 Unit C/W V C N.m g M5 Package outline PIN 1 PIN 21 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 3-3 APTGF150X60TE3 - Rev 0 July, 2003 |
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